Datasheet Details
| Part number | 2SC1456 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 175.36 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1456-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1456.
| Part number | 2SC1456 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 175.36 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1456-INCHANGE.pdf |
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·With TO-66 Package ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO IC PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range 5 V 0.15 A 10 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 12.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1456 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA;
IB= 5mA ICBO Collector Cutoff Current VCB= 200V;IB= 0 IEBO Emitter Cutoff Current VEB= 4V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC1456 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
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| 2SC1419 | NPN Transistor |
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| 2SC1441 | NPN Transistor |