Inchange Semiconductor 2SC1629
Silicon NPN Power Transistor
| Part No. | 2SC1629 |
|---|---|
| Datasheet | 2SC1629 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Sustaining Voltage- VCEO(SUS)= 90V(Min)●DARLINGTON
APPLICATIONS
●Automotive ignition●Switching regulator
●Motor control applications
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 90 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 6A ICM Collector Current-peak 10 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 0.3 50 150 -65~150 A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Rresistance,Junction to Case 1.5 ℃/W isc website： 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SC1629ELECTRICAL CHARACTERISTICS
Tj=25℃ unless