Datasheet4U Logo Datasheet4U.com

2SC1846 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor.

General Description

·Silicon NPN epitaxial planar type ·Low collector to emitter saturation voltage ·Output of 3W can be obtained by a complementary with 2SA0885 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Suited for medium output power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 35 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.0 A 1.2*1 W 5*2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ INCHANGE Semiconductor 2SC1846 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1846 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA;

IB= 50mA VBE(sat) Base-Emitter Saturation Voltage IC= 500mA;

IB= 50mA ICBO Collector Cutoff Current VCB= 20V;

2SC1846 Distributor