Inchange Semiconductor 2SC1848
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC1848 |
|---|---|
| Datasheet | 2SC1848 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Silicon NPN epitaxial planar●High voltage
●Complement to Type 2SA887
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for medium power amplifierABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range VALUE 70 50 5 2 1.2 UNIT V V V A w 10 W 150 ℃ -55~150 ℃ isc website： isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1848ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A ICBO Collector Cutoff Current VCB= 40V; IE= 0 IEBO Emitter Cutoff Current VEB=5V; IC= 0 hFE-1 DC Current Gain IC= 0.1A ; VCE= 5V hFE-2 DC Current Gain IC= 1.0A ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 500mA; VCE= 5V MIN TYP.