2SC1848
DESCRIPTION
- Silicon NPN epitaxial planar
- High voltage
- plement to Type 2SA887
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for medium power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Total Power Dissipation @ Ta=25℃ PC
Total Power Dissipation @ TC=25℃
Junction Temperature
Tstg
Storage Temperature Range
VALUE 70 50 5 2 1.2
UNIT V V V A w
℃
-55~150
℃ isc website：.iscsemi. isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
INCHANGE Semiconductor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
ICBO
Collector Cutoff Current
VCB= 40V; IE=...
