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2SC1848 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1848.

General Description

·Silicon NPN epitaxial planar ·High voltage ·Complement to Type 2SA887 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range VALUE 70 50 5 2 1.2 UNIT V V V A w 10 W 150 ℃ -55~150 ℃ isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1848 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A;

IB= 0.1A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A;

IB= 0.2A ICBO Collector Cutoff Current VCB= 40V;

2SC1848 Distributor