Datasheet Details
| Part number | 2SC2525 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.84 KB |
| Description | NPN Transistor |
| Datasheet | 2SC2525-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2525.
| Part number | 2SC2525 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.84 KB |
| Description | NPN Transistor |
| Datasheet | 2SC2525-INCHANGE.pdf |
|
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·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 12 A IE Emitter Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -12 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2525 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA ;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA ;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2525 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC2523 | NPN Transistor |
| 2SC2527 | NPN Transistor |
| 2SC2501 | NPN Transistor |
| 2SC2502 | NPN Transistor |
| 2SC2516 | NPN Transistor |
| 2SC2517 | NPN Transistor |
| 2SC2534 | NPN Transistor |
| 2SC2535 | NPN Transistor |
| 2SC2541 | NPN Power Transistor |
| 2SC2542 | NPN Transistor |