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2SC2565 - NPN Transistor

General Description

High Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min) Good Linearity of hFE Complement to Type 2SA1095 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for general purpose applications.

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1095 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2565 isc website：www.iscsemi.