2SC2565 - Silicon NPN Transistor

Toshiba

Key Features

High Breakdown Voltage : V CEO=160V.
High Transition Frequency : f T=80MHz (Typ. ).
Complementary to 2SA1095.
Recommended for 100W High-Fidelity Audio Frequency Amplifier Output Stage.

2SC2565 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SC2565
Manufacturer	Toshiba
File Size	89.38 KB
Description	Silicon NPN Transistor
Datasheet	2SC2565 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SC2565 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Unit in mm POWER AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage : V CEO=160V • High Transition Frequency : f T=80MHz (Typ.) • Complementary to 2SA1095. • Recommended for 100W High-Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL V CBO VcEO VEBO ic PC L stg RATING 160 160 UNIT 15 -15 150 150 °C -55M.50 fefJTT^H^ L BASE Z COLLECTOR (HEAT SINK) 3. EMITTER JEDEC TOSHIBA 2 - 34 A 1A Weight : 10.