• Part: 2SC2565
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 89.38 KB
Download 2SC2565 Datasheet PDF
Toshiba
2SC2565
FEATURES - High Breakdown Voltage : V CEO=160V - High Transition Frequency : f T=80MHz (Typ.) - plementary to 2SA1095. - Remended for 100W High-Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL V CBO Vc EO VEBO ic L stg RATING 160 160 UNIT 15 -15 °C -55M.50 fef JTT^H^ L BASE Z COLLECTOR (HEAT SINK) 3. EMITTER JEDEC TOSHIBA - 34 A 1A Weight : 10.1 ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current Collect or- Emitter Breakdown Voltage ICBO l EBO V (BR) CEO Emitter-Base Breakdown Voltage DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance V (BR)EB0 h FE(l) (Note) h FE(2) v CE(sat) VBE f T Cob Note...