2SC2565 Datasheet | Specifications & PDF Download

2SC2565 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Unit in mm POWER AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage : V CEO=160V • High Tr

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·Complement to Typ

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC2565 DESCRIPTION ·With MT-200 package ·Complemen

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