2SC2580
Description
Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min) - Good Linearity of hFE - High Power Dissipation - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
- Part: 2SC2580
- Description: NPN Transistor
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 198.07 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SC2580 | SavantIC | SILICON POWER TRANSISTOR |
| 2SC2585 | Advanced Semiconductor | NPN SILICON RF TRANSISTOR |