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2SC2580 - NPN Transistor

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Description

Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min) Good Linearity of hFE High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=

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Datasheet Details

Part number 2SC2580
Manufacturer INCHANGE
File Size 198.07 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 9 A 90 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2580 isc website：www.iscsemi.
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