Datasheet Details
| Part number | 2SC2582 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.15 KB |
| Description | NPN Transistor |
| Download | 2SC2582 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC2582 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.15 KB |
| Description | NPN Transistor |
| Download | 2SC2582 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min) ·Good Linearity of hFE ·High Collector Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 35 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1.5 A 10 W 1.2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2582 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SC2582 MIN TYP.
MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2582 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC2580 | NPN Transistor |
| 2SC2581 | NPN Transistor |
| 2SC2501 | NPN Transistor |
| 2SC2502 | NPN Transistor |
| 2SC2516 | NPN Transistor |
| 2SC2517 | NPN Transistor |
| 2SC2523 | NPN Transistor |
| 2SC2525 | NPN Transistor |
| 2SC2527 | NPN Transistor |
| 2SC2534 | NPN Transistor |