2SC2582
Description
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min) - Good Linearity of hFE - High Collector Power Dissipation - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
- Part: 2SC2582
- Description: NPN Transistor
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 192.15 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SC2585 | Advanced Semiconductor | NPN SILICON RF TRANSISTOR |
| 2SC2580 | SavantIC | SILICON POWER TRANSISTOR |