Inchange Semiconductor 2SC3163
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC3163 |
|---|---|
| Datasheet | 2SC3163 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max.)@IC= 3A●Fast Switching Speed
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for switching regulator, DC-DC converter and high frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 500 VCEO Collector-Emitter Voltage 400 VCER Collector-Emitter Voltage RBE= 100Ω 450 VEBO Emitter-Base Voltage 7 IC Collector Current-Continuous 6 ICM Collector Current-Peak 12 IB Base Current-Continuous 2 IBM Base Current-Peak 4 PC Collector Power Dissipation @ TC=25℃ 50 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 UNIT V V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 2.5 ℃/W 2SC3163 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3163ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.