2SC3168 Overview
·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors isc Product Specification 2SC3168 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base breakdown voltage IC=1mA ; IB=0 V(BR)CEO Collector-emitter...
