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isc Silicon NPN Power Transistor
isc Product Specification
2SC3168
DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·Minimum Lot-to-Lot variations for robust device
Performance and reliable operation.
APPLICATIONS ·Switching regulator ·Motor controls ·Deflections circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
10
A
IB
Base Current
7
A
PC
Collector Power Dissipation@TC=25℃
200
W
TJ, Tstg
Operating and Storage Junction Temperature Range
-65~+200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 0.