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2SC3168 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor isc Product Specification 2SC3168.

General Description

·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation.

APPLICATIONS ·Switching regulator ·Motor controls ·Deflections circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A IB Base Current 7 A PC Collector Power Dissipation@TC=25℃ 200 W TJ, Tstg Operating and Storage Junction Temperature Range -65~+200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.875 ℃/W isc website:.iscsemi.

1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors isc Product Specification 2SC3168 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base breakdown voltage IC=1mA ;

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