Datasheet Details
| Part number | 2SC3169 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.41 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3169-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2SC3169.
| Part number | 2SC3169 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.41 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3169-INCHANGE.pdf |
|
|
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· ·Collector-Emiiter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 1A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 2 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3169 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 20mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3169 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC3163 | NPN Transistor |
| 2SC3168 | NPN Transistor |
| 2SC3110 | Silicon Power Transistor |
| 2SC3144 | NPN Transistor |
| 2SC3146 | NPN Transistor |
| 2SC3148 | NPN Transistor |
| 2SC3150 | NPN Transistor |
| 2SC3151 | NPN Transistor |
| 2SC3152 | NPN Transistor |
| 2SC3153 | NPN Transistor |