Inchange Semiconductor 2SC3184
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC3184 |
|---|---|
| Datasheet | 2SC3184 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High breakdown voltage - : VCBO≥900V●Good Linearity of hFE
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Power amplifier applications●Switching Regulator applications
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 0.5 A ICM Collector Current-pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3184 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3184ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 800 V VCE(sat) Collector-Emitter Saturation Voltage IC= 300mA; IB= 60mA 2.0 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA IEBO Emitter Cuto...