Datasheet Details
| Part number | 2SC3184 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.56 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3184-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC3184 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.56 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3184-INCHANGE.pdf |
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·High breakdown voltage - : VCBO≥900V ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Switching Regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 0.5 A ICM Collector Current-pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3184 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3184 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
IB= 0 800 V VCE(sat) Collector-Emitter Saturation Voltage IC= 300mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3184 | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
| Part Number | Description |
|---|---|
| 2SC3180 | NPN Transistor |
| 2SC3180N | NPN Transistor |
| 2SC3181 | NPN Transistor |
| 2SC3182 | NPN Transistor |
| 2SC3110 | Silicon Power Transistor |
| 2SC3144 | NPN Transistor |
| 2SC3146 | NPN Transistor |
| 2SC3148 | NPN Transistor |
| 2SC3150 | NPN Transistor |
| 2SC3151 | NPN Transistor |