Datasheet Details
| Part number | 2SC3300 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.96 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3300-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2SC3300.
| Part number | 2SC3300 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.96 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3300-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for DC-DC converter, emergency lighting inverter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 15 V IC Collector Current-Continuous 15 A ICP Collector Current-Peak 25 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3300 | SILICON POWER TRANSISTOR | SavantIC |
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