Download 2SC3307 Datasheet PDF
Inchange Semiconductor
2SC3307
DESCRIPTION - High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) - High Switching Speed - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - High speed and high voltage switching applications. - Switching regulator applications. - High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3307 isc website:.iscsemi....