Datasheet Details
| Part number | 2SC3409 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.03 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3409-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3409.
| Part number | 2SC3409 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.03 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3409-INCHANGE.pdf |
|
|
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·Low Collector Saturation Voltage ·100% avalanche tested ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 2 A ICM Collector Current-Pulse 5 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3409 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A;
IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3409 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC3416 | NPN Transistor |
| 2SC3419 | NPN Transistor |
| 2SC3420 | NPN Transistor |
| 2SC3423 | NPN Transistor |
| 2SC3424 | NPN Transistor |
| 2SC3447 | NPN Transistor |
| 2SC3450 | NPN Transistor |
| 2SC3451 | NPN Transistor |
| 2SC3456 | NPN Transistor |
| 2SC3457 | NPN Transistor |