| Part Number | 2SC3409 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Low Collector Saturation Voltage ·100% avalanche tested ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in h. Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A ICBO Collector Cutoff Current VCB= 900V; IE= 0 IEBO Emitter Cutoff Current VEB= 10V; IC= 0 hFE DC Current Gain . |
2SC3409 Datasheet and Specifications PDF
The 2SC3409 is a NPN Transistor.
Key Specifications
| Part Number | 2SC3409 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-3PN package ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING PIN 1 2 3 Base Collector;connected to mountin. emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=5mA ;RBE=7 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=1.5A ;IB=0.3A IC=1.5A;IB=0.3A VCB=800V; IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=4V 15 MIN 800 900 10 2SC3409 SYMBOL V(BR)CEO V(. |