Inchange Semiconductor 2SC3514
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC3514 |
|---|---|
| Datasheet | 2SC3514 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min)●Good Linearity of hFE
●Complement to Type 2SA1383
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Adudio frequency power amplifierABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 0.1 A Collector Power Dissipation@ Ta=25℃ 1.5 PC W Collector Power Dissipation@TC=25℃ 10 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA VBE(sat) Base-Emitter Saturation Voltage IC= 50mA; IB= 5mA ICBO Collector Cutoff Current VCB= 180V; IE= 0 IEBO Emitter Cutoff Current VEB= 3.0V; I...