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2SC3519 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistors.

General Description

·Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min)-2SC3519 = 180V(Min)-2SC3519A ·Good Linearity of hFE ·Complement to Type 2SA1386/A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT 2SC3519 160 VCBO Collector-Base Voltage V 2SC3519A 180 2SC3519 160 VCEO Collector-Emitter Voltage V 2SC3519A 180 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 130 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3519/A isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors 2SC3519/A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage 2SC3519 2SC3519A IC= 25mA ;

IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A;

IB= 0.5A ICBO Collector Cutoff Current 2SC3519 VCB= 160V;

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