Datasheet Summary
isc Silicon NPN Power Transistors
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
V(BR)CEO= 160V(Min)-2SC3519 = 180V(Min)-2SC3519A
- Good Linearity of hFE
- plement to Type 2SA1386/A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for audio and general purpose...
