Datasheet Details
| Part number | 2SC3518 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 237.73 KB |
| Description | NPN Power Transistor |
| Datasheet | 2SC3518-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC3518 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 237.73 KB |
| Description | NPN Power Transistor |
| Datasheet | 2SC3518-INCHANGE.pdf |
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·Low collector saturation voltage ·High DC current gain ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·This transistor is ideal for audio frequency amplifier and switching especially in hybrid integrated circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak NOTE1 PC Collector Power Dissipation @Ta=25℃ NOTE2 TJ Junction Temperature 7 A 2 W 150 ℃ Tstg Storage Temperature Range NOTE1:PW≤300ms,Duty cycle ≤10% NOTE2:Printing boarding mounted -55~150 ℃ 2SC3518 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)NOTE Collector-Emitter Saturation Voltage IC= 2A;
IB= 200mA VBE(sat)NOTE Base-Emitter Saturation Voltage IC= 2A;
IB= 200mA ICBO Collector Cutoff Current VCB= 50V;
Compare 2SC3518 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
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2SC3518 | Silicon Power Transistors | Renesas |
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2SC3518-Z | NPN Transistor | NEC |
| 2SC3518-Z | Silicon NPN Power Transistor | Inchange Semiconductor | |
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2SC3518-Z | NPN Transistor | Kexin |
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2SC3518-Z | SILICON POWER TRANSISTOR | Renesas |
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