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2SC3518 - NPN Power Transistor

General Description

Low collector saturation voltage High DC current gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This transistor is ideal for audio frequency amplifier and switching especially in hybrid integrated circuits ABSOLUTE MAXIMUM R

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isc Silicon NPN Power Transistor DESCRIPTION ·Low collector saturation voltage ·High DC current gain ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·This transistor is ideal for audio frequency amplifier and switching especially in hybrid integrated circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak NOTE1 PC Collector Power Dissipation @Ta=25℃ NOTE2 TJ Junction Temperature 7 A 2 W 150 ℃ Tstg Storage Temperature Range NOTE1:PW≤300ms,Duty cycle ≤10% NOTE2:Printing boarding mounted -55~150 ℃ 2SC3518 isc website：www.iscsemi.