FEATURES
Low VCE(sat). +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 High DC current gain. 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter ABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) *1 Total power dissipation *2 Junction temperature Storage temperature *1 PW 10 ms, duty cycle 50% Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg Rating 60 60 7 5 7 2 150 -55 to +150 Unit V V V A A W *2 When mounted on ceramic substrate of 7.5cm2X0.7mm ELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Gain bandwidth product Turn-on time Storage time Turn-off time *. PW 350ìs,duty cycle 2% Symbol ICBO IEBO hFE Testconditons VCB = 50V, IE=0 VEB = 7V, IC=0 VCE = 1V , IC...