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2SC3518-Z - NPN Transistor

Key Features

  • Low VCE(sat). +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 High DC current gain. 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse).
  • 1 Total power dissipation.
  • 2 Junction temperature Storage temperature.
  • 1 PW 10 ms,.

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SMD Type NPN Silicon Epitaxia 2SC3518-Z TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low VCE(sat). +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 High DC current gain. 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) *1 Total power dissipation *2 Junction temperature Storage temperature *1 PW 10 ms, duty cycle 50% Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg Rating 60 60 7 5 7 2 150 -55 to +150 Unit V V V A A W *2 When mounted on ceramic substrate of 7.5cm2X0.