2SC3518-Z Datasheet PDF

Part Number	2SC3518-Z
Manufacturer	Renesas
Overview	The 2SC3518-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High DC Current Gain hFE = 100 to 400 • Low VCE(sat): VCE(sat) = 0.09 V TYP. * High DC Current Gain hFE = 100 to 400 * Low VCE(sat): VCE(sat) = 0.09 V TYP. * Complement to 2SA1385-Z ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 60 V Emitter to Base Voltage VEBO 7 V Collector Current (DC) IC(DC) 5 A.

Part Number

2SC3518-Z

Description

Silicon NPN Power Transistor

Manufacturer

Inchange Semiconductor

Overview

·Low collector saturation voltage ·High DC current gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·This transistor is ide. (sat)NOTE Collector-Emitter Saturation Voltage IC= 2A; IB= 200mA VBE(sat)NOTE Base-Emitter Saturation Voltage IC= 2A; IB= 200mA ICBO Collector Cutoff Current VCB= 50V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1NOTE DC Current Gain IC= 5A; VCE= 1V hFE-2NOTE DC Current Gain I.

Part Number

2SC3518-Z

Description

NPN Transistor

Manufacturer

Kexin Semiconductor

Overview

SMD Type NPN Silicon Epitaxia 2SC3518-Z TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low VCE(sat). +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0. Low VCE(sat). +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 High DC current gain. 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector.