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2SC3518-Z - SILICON POWER TRANSISTOR

General Description

The 2SC3518-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits.

Key Features

  • High DC Current Gain hFE = 100 to 400.
  • Low VCE(sat): VCE(sat) = 0.09 V TYP.
  • Complement to 2SA1385-Z.

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Datasheet Details

Part number 2SC3518-Z
Manufacturer Renesas
File Size 686.97 KB
Description SILICON POWER TRANSISTOR
Datasheet download datasheet 2SC3518-Z Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SILICON POWER TRANSISTOR 2SC3518-Z NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3518-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High DC Current Gain hFE = 100 to 400 • Low VCE(sat): VCE(sat) = 0.09 V TYP. • Complement to 2SA1385-Z ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 60 V Emitter to Base Voltage VEBO 7 V Collector Current (DC) IC(DC) 5 A Collector Current (pulse) Note 1 IC(pulse) 7 A Total Power Dissipation (TA = 25°C) Note 2 PT 2.0 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C PACKAGE DRAWING (Unit: mm) 6.5 ±0.2 5.0 ±0.2 4.4 ±0.2 4 Note 1.5 +0.2 −0.1 2.3 ±0.2 0.