Inchange Semiconductor 2SC3585
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC3585 |
|---|---|
| Datasheet | 2SC3585 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector Current IC= 35mA●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 10V(Min)
●High gain: ︱ S21e ︱ 2 = 5.5 dB (typical) ( IC=5mA,f=2GHz)
●Gain bandwidth product fT = 10 GHZ (typical) (IC=10mA,f=1GH)
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed forVHF, UHF and CATV high frequency wideband low noise amplifier applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 1.5 V IC Collector Current-Continuous 35 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SC3585 isc website： 1 isc & iscsemi is registered trademar isc Silicon NPN RF Transistor 2SC3585ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CBO Collector-Base Breakdown Voltage ICBO Collector Cutoff Current IEBO Emitter-Base Cutoff Current hFE...