2SC3750 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V(Min.) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3750 Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO...