Datasheet Details
| Part number | 2SC3751 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.23 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3751-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC3751 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.23 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3751-INCHANGE.pdf |
|
|
|
·High Breakdown Voltage and High Reliability ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Pulse 5 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.8 A 25 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SC3751 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3751 | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
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| 2SC3725 | NPN Transistor |
| 2SC3743 | NPN Transistor |
| 2SC3746 | NPN Transistor |
| 2SC3747 | Silicon NPN Power Transistor |