Datasheet Details
| Part number | 2SC3754 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 219.20 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SC3754 Download (PDF) |
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| Part number | 2SC3754 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 219.20 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SC3754 Download (PDF) |
|
|
|
·Wide Area of Safe Operation ·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Current-Pulse 12 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 2 A 60 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SC3754 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
isc Silicon NPN Power Transistor.
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| 2SC3714 | Silicon NPN Transistor |
| 2SC3719 | Power Transistor |
| 2SC3720 | Power Transistor |
| 2SC3729 | Power Transistor |
| 2SC3737 | Power Transistor |
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| 2SC3783 | Silicon NPN Power Transistor |
| 2SC3789 | Silicon NPN Transistor |