Datasheet Details
| Part number | 2SC3873 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.41 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3873-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC3873 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.41 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3873-INCHANGE.pdf |
|
|
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·Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) ·Low Collector Saturation Voltage ·Wide Area of Safe Operation ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCES Collector-Emitter Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 22 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 3 W 100 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3873 · isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3873 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3873 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC3870 | NPN Transistor |
| 2SC3874 | NPN Transistor |
| 2SC3821 | NPN Transistor |
| 2SC3822 | NPN Transistor |
| 2SC3830 | NPN Transistor |
| 2SC3831 | NPN Transistor |
| 2SC3832 | NPN Transistor |
| 2SC3833 | NPN Transistor |
| 2SC3834 | NPN Transistor |
| 2SC3835 | NPN Transistor |