Datasheet4U Logo Datasheet4U.com

2SC3993 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor isc Product Specification 2SC3993.

General Description

·High Switching Speed ·High Breakdown Voltage- : V(BR)CBO= 1100V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·800V/16A switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 16 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 40 A 250 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:.iscsemi.

1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor isc Product Specification 2SC3993 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;

IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A;

2SC3993 Distributor