Datasheet Summary
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
DESCRIPTION
- High Collector-Emitter Breakdown Voltage
VCEO= 160V(Min)
- plement to Type 2SA1659
- Full-mold package that does not require an insulating board or bushing when mounting.
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for high voltage...
