Datasheet Details
| Part number | 2SC4370 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 174.42 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4370-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4370.
| Part number | 2SC4370 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 174.42 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4370-INCHANGE.pdf |
|
|
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·High Collector-Emitter Breakdown Voltage VCEO= 160V(Min) ·Complement to Type 2SA1659 ·Full-mold package that does not require an insulating board or bushing when mounting.
·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5.0 V IC(DC) Collector Current(DC) 1.5 A IB(DC) PC TJ Base Current Collector Power Dissipation @TC=25℃ Junction Temperature Tstg Storage Temperature 0.15 A 20 W 150 ℃ -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4370 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC4370 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC4371 | Silicon NPN Power Transistor |
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