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2SC4371 - Silicon NPN Power Transistor

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400(Min) Excellent Switching Times- : tr= 1.0μs(Max), tf= 1.0μs(Max)@ IC= 4A 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator appli

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400(Min) ·Excellent Switching Times- : tr= 1.0μs(Max), tf= 1.