Datasheet Details
| Part number | 2SC4371 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 170.93 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC4371_INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC4371 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 170.93 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC4371_INCHANGE.pdf |
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400(Min) ·Excellent Switching Times- : tr= 1.0μs(Max), tf= 1.0μs(Max)@ IC= 4A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator application ·High voltage switching application ·High Speed DC-DC converter application ·Fluorescent light ballastor application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 7 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1 A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ INCHANGE Semiconductor 2SC4371 isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4371 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ;
IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
| Part Number | Description |
|---|---|
| 2SC4370 | NPN Transistor |
| 2SC4300 | NPN Transistor |
| 2SC4301 | NPN Transistor |
| 2SC4303 | NPN Transistor |
| 2SC4304 | NPN Transistor |
| 2SC4308 | NPN Transistor |
| 2SC4313 | NPN Transistor |
| 2SC4327 | NPN Transistor |
| 2SC4336 | NPN Transistor |
| 2SC4350 | NPN Transistor |