Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400(Min)
- Excellent Switching Times-
: tr= 1.0μs(Max), tf= 1.0μs(Max)@ IC= 4A
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Switching regulator application
- High voltage switching application
- High Speed DC-DC converter application
- Fluorescent light ballastor...