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2SC4981 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistors.

General Description

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) ·Low Collector Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in drivers such as DC/DC converters and actuators.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 14 A IB Base Current-Continuous 1.5 A IBM Base Current-Peak PT Total Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 5 ℃/W INCHANGE Semiconductor 2SC4981 isc Website:.iscsemi.cn 1 isc & iscsemi isregistered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SC4981 MIN TYP.

MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A;

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