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2SC4982 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistors INCHANGE Semiconductor 2SC4982.

General Description

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) ·Collector Current-IC= 10A(Max.) ·Low Collector Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in drivers such as DC/DC converters and actuators.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 100 VCEO Collector-Emitter Voltage 80 VEBO Emitter-Base Voltage 7 IC Collector Current-Continuous 10 ICM Collector Current-Peak 20 IB Base Current-Continuous 1.5 IBM Base Current-Peak 2 PT Total Power Dissipation @ TC=25℃ 25 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 5 ℃/W isc Website:.iscsemi.cn 1 isc & iscsemi isregistered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SC4982 MIN TYP.

MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A;

2SC4982 Distributor