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2SC4982 Datasheet PDF

Inchange Semiconductor 2SC4982

The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Part No. 2SC4982
Datasheet 2SC4982 Download
Manufacturer
Inchange Semiconductor
Description NPN Transistor
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2SC4982 datasheet page 1 preview

DESCRIPTION

●Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min)
●Collector Current-IC= 10A(Max.)
●Low Collector Saturation Voltage
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS

●Designed for use in drivers such as DC/DC converters and actuators.

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 100 VCEO Collector-Emitter Voltage 80 VEBO Emitter-Base Voltage 7 IC Collector Current-Continuous 10 ICM Collector Current-Peak 20 IB Base Current-Continuous 1.5 IBM Base Current-Peak 2 PT Total Power Dissipation @ TC=25℃ 25 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 5 ℃/W isc Website: 1 isc & iscsemi isregistered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistors

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SC4982 MIN TYP.
2SC4982 page 2 preview