Datasheet4U Logo Datasheet4U.com

2SC5103 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5103.

General Description

·High Collector Current -IC= 5A ·Low Collector Saturation Voltage ·Complement to Type 2SA1952 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.

APPLICATIONS ·Designed for use in high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 10 A 10 W 1.0 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC5103 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

MAX UNIT VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A;

2SC5103 Distributor