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2SC5103 - NPN Transistor

General Description

High Collector Current -IC= 5A Low Collector Saturation Voltage Complement to Type 2SA1952

performance and reliable operation.

Designed for use in high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5103 DESCRIPTION ·High Collector Current -IC= 5A ·Low Collector Saturation Voltage ·Complement to Type 2SA1952 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for use in high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 10 A 10 W 1.0 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.