Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 450V(Min)
- High Switching Speed
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Switching regulator applications.
- High voltage switching applications.
- DC-DC converter applications.
- Inverter lighting...
