Datasheet Details
| Part number | 2SC5584 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 182.58 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5584-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor isc Product Specification 2SC5584.
| Part number | 2SC5584 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 182.58 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5584-INCHANGE.pdf |
|
|
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·Silicon NPN triple diffusion mesa type ·High Switching Speed ·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 20 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor isc Product Specification 2SC5584 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC5584 | NPN TRANSISTOR | Panasonic Semiconductor |
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