Datasheet Details
| Part number | 2SC5586 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.66 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5586-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC5586 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.66 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5586-INCHANGE.pdf |
|
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·High Collector-Base Voltage- : VCBO= 900V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 550 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 70 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC5586 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO Collector-Emitter Voltage IC= 30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.8A;
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