2SC5586 - NPN Transistor

Inchange Semiconductor

General Description

High Collector-Base Voltage- : VCBO= 900V(Min) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for horizontal deflection output applications.

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2SC5586 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SC5586
Manufacturer	Inchange Semiconductor
File Size	215.66 KB
Description	NPN Transistor
Datasheet	2SC5586 Datasheet

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Base Voltage- : VCBO= 900V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 550 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 70 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC5586 isc website：www.iscsemi.