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2SC5764 - NPN Transistor

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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) Fast Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulators applicatio

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Datasheet Details

Part number 2SC5764
Manufacturer INCHANGE
File Size 174.10 KB
Description NPN Transistor
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isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulators applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 14 A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ INCHANGE Semiconductor 2SC5764 isc Website：www.iscsemi.
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