Datasheet Details
| Part number | 2SC5855 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.76 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5855-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5855.
| Part number | 2SC5855 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.76 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5855-INCHANGE.pdf |
|
|
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·High speed switching ·High voltage ·Low saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for super high resolution ·Display color TV digital TV ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5855 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE=1mA;
IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=8A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC5855 | Silicon NPN Transistor | Toshiba |
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