2SC5855 Description
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE=1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=8A; IB= 2A VBE(sat) Base-Emitter Saturation Voltage IC=8A;.
- Part: 2SC5855
- Manufacturer: Inchange Semiconductor (official site)
- Size: 184.76 KB
Equivalent or Similar Parts
| Manufacturer | Part Number | Description |
|---|---|---|
Toshiba |
2SC5855 | Silicon NPN Transistor |