Datasheet Details
| Part number | 2SC5895 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.08 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5895-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5895.
| Part number | 2SC5895 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 177.08 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5895-INCHANGE.pdf |
|
|
|
·High Breakdown Voltage ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power supply for audio & visual equipments such as TVS and VCRS ·Industrial equipments such as DC-DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 2 A IB Base Current- Continuous 0.5 A ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 2 W 15 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5895 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;
IB= 0.25A ICBO Collector Cutoff Current VCB= 60V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC5895 | NPN TRANSISTOR | Panasonic Semiconductor |
 |
2SC5895 | SILICON POWER TRANSISTOR | SavantIC |
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