Inchange Semiconductor 2SC945
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC945 |
|---|---|
| Datasheet | 2SC945 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Voltage●Excellent hFE linearity
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Dsigned for use in driver stage of AF amplifier and low speed switchingABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 2SC945 VALUE UNIT 60 V 50 V 5 V 100 mA 20 mA 250 mW 125 ℃ -55~125 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Transistor 2SC945ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 100mA ; IB= 10mA MIN TYP. MA X UNI T 0.15 0.3 V VBE(sat) Base-Emitter Saturation Voltage IC= 100mA ; IB= 10 mA 0.86 1.0 V VBE Base -Emitter Voltage IC= 1.0mA ; VCE= 6V 0.55 0.65 V ICBO Collector Cu...
