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2SC945 - NPN Silicon Transistor

General Description

The 2SC945 is designed for use in driver stage of AF amplifier and low speed switching.

Key Features

  • High voltage LVCEO = 50 V MIN.
  • Excellent hFE linearity hFE1 = (0.1 mA)/hFE2 (1.0 mA) = 0.92 TYP.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET NPN SILICON TRANSISTOR 2SC945 NPN SILICON TRANSISTOR DESCRIPTION The 2SC945 is designed for use in driver stage of AF amplifier and low speed switching. FEATURES • High voltage LVCEO = 50 V MIN. • Excellent hFE linearity hFE1 = (0.1 mA)/hFE2 (1.0 mA) = 0.92 TYP. ABSOLUTE MAXIMUM RATINGS Maximum Temperature Storage Temperature Junction Temperature Maximum Power Dissipation (TA = 25°C) Total Power Dissipation −55 to +150°C +150°C Maximum 250 mW Maximum Voltages and Currents (TA = 25°C) VCBO Collector to Base Voltage VCEO Collector to Emitter Voltage VEBO Emitter to Base Voltage IC Collector Current IB Base Current 60 V 50 V 5.0 V 100 mA 20 mA PACKAGE DRAWING (Unit: mm) φ 5.2 MAX. 5.5 MAX. 12.7 MIN. 0.5 1.27 2.54 1.77 MAX. 4.2 MAX. 123 1. Emitter 2. Collector 3.