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2SC945 - NPN Silicon Transistor

Key Features

  • s 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base +0.1 0.38-0.1 2.Emitter 3.collector.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 60 50 5 150 200 150 -55 to +150 Unit V V V mA mW ℃ ℃.
  • Electrical Characteristics Ta = 25℃ Parameter Collector-base breakdown voltage Collector-emit.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type NPN Silicon Transistor 2SC945 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Diodes Transistors Unit: mm +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 ● High hFE linearity 0.55 ● Collector current up to 150mA +0.1 1.3-0.1 ■ Features 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base +0.1 0.38-0.1 2.Emitter 3.