Kexin Electronics 2SC945
NPN Silicon Transistor
FEATURES
0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base +0.1 0.38-0.1 2.Emitter 3.collector●
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 60 50 5 150 200 150 -55 to +150 Unit V V V mA mW ℃ ℃●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current gain Collector saturation voltage Base saturation voltage Collector to base capacitance Noise figure Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) Cob NF fT Testconditons IC=100 μA, IE=0 IC=1mA , IB=0 IE=100 μA, IC=0 VCB = 60V, IE = 0 VEB = 5.0 V, IC = 0 VCE = 6.0V, IC =1.0mA VCE = 6.0V, IC =0.1mA IC=100mA,IB=10mA IC=100mA,IB=10mA VCB = 10 V, IE = 0 , f...