2SD1070 datasheet by Inchange Semiconductor.
| Part number | 2SD1070 |
|---|---|
| Datasheet | 2SD1070-INCHANGE.pdf |
| File Size | 182.85 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1070 TC=25℃ unless otherwise specified SYMBOL PARAMETER...
View all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD1072 | NPN Transistor |
| 2SD1016 | NPN Transistor |
| 2SD1022 | NPN Transistor |
| 2SD1023 | NPN Transistor |
| 2SD1024 | NPN Transistor |
| 2SD1025 | NPN Transistor |
| 2SD1031 | NPN Transistor |
| 2SD1037 | NPN Transistor |
| 2SD1038 | NPN Transistor |
| 2SD1040 | NPN Transistor |
