2SD1070
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.)
- Good Linearity of h FE
- Wide Area of Safe Operation
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Pulse
Collector Power Dissipation @ TC=25℃
PC Collector Power Dissipation @ Ta=25℃
Junction Temperature
60 W
℃
Tstg
Storage Temperature Range
-55~150
℃ isc website：.iscsemi....
