Inchange Semiconductor 2SD1162
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD1162 |
|---|---|
| Datasheet | 2SD1162 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Darlington Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High DC Current Gain- : hFE= 400(Min.)@IC= 2A●High Switching Speed
●Low Collector Saturation Voltage
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for high voltage, low speed switching industrial use.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 5 A ICM Base Current-Peak 10 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 0.5 A 40 W 1.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 5m...