Datasheet Details
| Part number | 2SD1210 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.86 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1210-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor 2SD1210.
| Part number | 2SD1210 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.86 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1210-INCHANGE.pdf |
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·High DC Current Gain : hFE= 1000(Min.)@ IC= 10A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current- Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1 A 3 W 80 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 10A, IB= 25mA VBE(sat) Base-Emitter Saturation Voltage IC= 10A, IB= 25mA ICBO Collector Cutoff current VCB= 100V, IE= 0 IEBO Emitter Cutoff Current VEB= 8V;
IC= 0 hFE DC Current Gain IC= 10A;
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