Download 2SD1210 Datasheet PDF
2SD1210 page 2
Page 2

2SD1210 Description

hFE= 1000(Min.)@ IC= 10A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial use. 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER...