Datasheet Details
| Part number | 2SD1230 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.00 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet | 2SD1230-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor 2SD1230.
| Part number | 2SD1230 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.00 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet | 2SD1230-INCHANGE.pdf |
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·High DC Current Gain : hFE= 1500(Min.)@ IC= 4A, VCE= 3V ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.) ·Complement to Type 2SB913 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 12 A 2.5 W 60 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1230 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
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| 2SD1238L | NPN Transistor |
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