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2SD1230 - Silicon NPN Darlington Power Transistor

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Part number 2SD1230
Manufacturer INCHANGE
File Size 217.00 KB
Description Silicon NPN Darlington Power Transistor
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High DC Current Gain : hFE= 1500(Min.)@ IC= 4A, VCE= 3V Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.) Complement to Type 2SB913 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Vol

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