2SD1230 Overview
hFE= 1500(Min.)@ IC= 4A, VCE= 3V ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.) ·plement to Type 2SB913 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor TC=25℃...
