Datasheet Details
| Part number | 2SD1430 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 187.64 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1430-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1430.
| Part number | 2SD1430 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 187.64 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1430-INCHANGE.pdf |
|
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·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 3.5 A IE Emitter Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.5 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;
IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 3A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD1430 | Silicon NPN Transistor | Toshiba Semiconductor |
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2SD1430 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SD1431 | NPN Transistor |
| 2SD1432 | NPN Transistor |
| 2SD1433 | NPN Transistor |
| 2SD1436 | NPN Transistor |
| 2SD1437 | NPN Transistor |
| 2SD1439 | NPN Transistor |
| 2SD1400 | NPN Transistor |
| 2SD1402 | NPN Transistor |
| 2SD1403 | NPN Transistor |
| 2SD1404 | Silicon NPN Power Transistor |