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2SD1431 - NPN Transistor

Datasheet Summary

Description

High Speed tf= 1.0 us(MIN) @ IC= 4A , IB(end)= 0.8A High Voltage VCBO=1300V Low Saturation Voltage VCE(sat)

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Datasheet Details

Part number 2SD1431
Manufacturer INCHANGE
File Size 211.61 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor DESCRIPTION ·High Speed tf= 1.0 us(MIN) @ IC= 4A , IB(end)= 0.8A ·High Voltage VCBO=1300V ·Low Saturation Voltage VCE(sat)<5.0V@ IC = 4A; IB = 0.8A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IE Emitter Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1431 isc website：www.iscsemi.
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