2SD1431 Overview
·High Speed tf= 1.0 us(MIN) @ IC= 4A , IB(end)= 0.8A ·High Voltage VCBO=1300V ·Low Saturation Voltage VCE(sat)<5.0V@ IC = 4A; 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 4A;.

