2SD1431
DESCRIPTION
- High Speed tf= 1.0 us(MIN) @ IC= 4A , IB(end)= 0.8A
- High Voltage
VCBO=1300V
- Low Saturation Voltage
VCE(sat)<5.0V@ IC = 4A; IB = 0.8A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for color TV horizontal output applications
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Emitter Current
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SD1431 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS...
